| PART |
Description |
Maker |
| NAND04GW3C2AN1E NAND04GA3C2A NAND04GW3C2AN6E NAND0 |
4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory 4Gbit的，2112字节的页V供电，多级NAND闪存
|
意法半导
STMicroelectronics N.V.
|
| NAND16GW3C4B NAND08GW3C4BN1E NAND16GW3C4BN1E NAND0 |
8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
|
Numonyx B.V
|
| NAND02GW3B2BN1E NAND02GW3B2BN1F NAND02GW3B2BN6E NA |
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
|
Numonyx B.V
|
| NAND08GW3B2CN1E NAND08GW3B2CN1F NAND08GW3B2CN6E NA |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
|
Numonyx B.V
|
| LC322260J LC322260T-70 LC322260T-80 LC322260J-70 |
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode / Byte Read/Write
CONNECTOR ACCESSORY
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode, Byte Read/Write
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode Byte Read/Write
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| AT28C256 |
256K EEPROM with 64-Byte Page & Software Protection
|
Atmel
|
| AT28C64B |
64K EEPROM with 64-Byte Page & Software Data Protection
|
Atmel
|
| LC321664BJ LC321664BM LC321664BT-70 LC321664BT-80 |
1 MEG (65536 words X 16 bits) DRAM Fast Page Mode, Byte Write
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| NAND512W4A2CZA6F NAND512R3A2C NAND512R3A2CN6E NAND |
512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| CAT24C512LI-G CAT24C512XI-T2 CAT24C512WI-GT3 CAT24 |
512 kb I2C CMOS Serial EEPROM 128?Byte Page Write Buffer
|
ON Semiconductor
|
| NAND512R3A2SN6F |
512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories
|
Numonyx B.V
|
| MSM511664C-60TS-K MSM511664C-70JS MSM511664C-80JS |
65,536-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE (BYTE WRITE)
|
OKI electronic componets
|
